2db1386q/r document number: ds31147 rev. 6 - 2 1 of 5 www.diodes.com november 2011 ? diodes incorporated 2db1386q/r pnp surface moun t transistor features ? epitaxial planar die construction ? ideally suited for automated assembly processes ? ideal for medium power switching or amplification applications ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) mechanical data ? case: sot89 ? case material: molded plasti c, "green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin annealed over copper leadframe (lead free plating). solderable per mil-std-202, method 208 ? weight: 0.055 grams (approximate) ordering information (note 3) part number case packaging 2db1386q-13 sot89 2500/tape & reel 2db1386r-13 sot89 2500/tape & reel notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be found on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com. marking information top view device schematic pin out configuration 3 1 2,4 collector emitte r base 4 3 2 1 c c b e top view sot89 kp3x = product type marking code, where: kp3q = 2db1386q kp3r = 2db1386r yww = date code marking y = last digit of year (ex: 7 = 2007) ww = week code (01 ? 53) kp3x yww
2db1386q/r document number: ds31147 rev. 6 - 2 2 of 5 www.diodes.com november 2011 ? diodes incorporated 2db1386q/r maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -6 v peak pulse current i cm -10 a continuous collector current i c -5 a thermal characteristics characteristic symbol value unit power dissipation (note 4) @ t a = 25c p d 1 w thermal resistance, junction to ambient air (note 4) @ t a = 25c r ja 125 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit conditions off characteristics (note 5) collector-base breakdown voltage v ( br ) cbo -30 ? ? v i c = -50 a, i e = 0 collector-emitter breakdown voltage v ( br ) ceo -20 ? ? v i c = -1ma, i b = 0 emitter-base breakdown voltage v ( br ) ebo -6 ? ? v i e = -50 a, i c = 0 collector cut-off current i cbo ? ? -0.5 a v cb = -20v, i e = 0 emitter cut-off current i ebo ? ? -0.5 a v eb = -5v, i c = 0 on characteristics (note 5) collector-emitter saturation voltage v ce ( sat ) ? -0.25 -1.0 v i c = -4a, i b = -0.1a dc current gain 2db1386q h fe 120 ? 270 ? i c = -0.5a, v ce = -2v 2db1386r 180 ? 390 small signal characteristics output capacitance c obo ? 55 ? pf v cb = -20v, i e = 0, f = 1mhz current gain-bandwidth product f t ? 100 ? mhz v ce = -6v, i e = 50ma, f = 30mhz notes: 4. device mounted on fr-4 pcb; pad layout as shown on page 4 or in diodes inc. suggested pad layout document ap02001, wh ich can be found on our website at http://www.diodes.com. 5. measured under pulsed conditions. pulse width = 300 s. duty cycle 2%. 0 0.2 0.4 25 50 75 100 125 150 p , p o we r dissi p a t i o n (w) d t , ambient temperature (c) fig. 1 power dissipation vs. ambient temperature (note 4) a 0.6 0.8 1.0 0
2db1386q/r document number: ds31147 rev. 6 - 2 3 of 5 www.diodes.com november 2011 ? diodes incorporated 2db1386q/r 0.001 0.01 0.1 1 10 t = -55c a t = 25c a t = 85c a t = 150c a v = -2v ce t = -55c a t = 25c a t = 85c a t = 150c a i/i = 40 cb t = 85c a t = 150c a t = -55c a t = 25c a v = -2v ce t = -55c a t = 25c a t = 85c a t = 150c a i/i = 40 cb -i , collector current c fig. 8 typical gain-bandwidth product vs. collector current v = -6v f = 30mhz ce
2db1386q/r document number: ds31147 rev. 6 - 2 4 of 5 www.diodes.com november 2011 ? diodes incorporated 2db1386q/r package outline dimensions suggested pad layout sot89 dim min max a 1.40 1.60 b 0.44 0.62 b1 0.35 0.54 c 0.35 0.43 d 4.40 4.60 d1 1.52 1.83 e 2.29 2.60 e 1.50 typ e1 3.00 typ h 3.94 4.25 l 0.89 1.20 all dimensions in mm dimensions value (in mm) x 0.900 x1 1.733 x2 0.416 y 1.300 y1 4.600 y2 1.475 y3 0.950 y4 1.125 c 1.500 e d h l a c e 8 ( 4 x ) b1 b d1 r 0 . 2 0 0 e1 y1 x1 y2 y c x (3x) y3 y4 x2 (2x)
2db1386q/r document number: ds31147 rev. 6 - 2 5 of 5 www.diodes.com november 2011 ? diodes incorporated 2db1386q/r important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com
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